Power Efficient GaN HEMT High Power Amplifier Design Operating at 5-7GHz Bandwidth
نویسندگان
چکیده
منابع مشابه
WATT GAN HEMT POWER AMPLIFIER FOR LTE 5 Watt GaN HEMT Power Amplifier for LTE
This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...
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ژورنال
عنوان ژورنال: Journal of Applied and Emerging Sciences
سال: 2020
ISSN: 2415-2633,1814-070X
DOI: 10.36785/jaes.102422